久久久天堂,99久精品视频,国产九九久久,久久久久久久久久久久网站,久久一区二区国产,久久久国内精品,国产99久久久久久免费看

Your Position: Home > Support > Service Center

Microsoft joined a new generation of DRAM groups of HMCC reason

2012/8/16??????view:

  In May 8, 2012, promote the use of TSV ( TSV ) 3D laminated to a new generation of DRAM " Hybrid Memory Cube ( HMC ) Hybrid Memory Cube Consortium " popularity ( HMCC ) announced that the United States, software giant Microsoft has joined the association.

  HMC is the three-dimensional structure, the logic chip along the vertical direction superposition of multiple DRAM chips, and then through the TSV connection wiring technology. HMC 's biggest characteristic is compared with existing DRAM, performance can be greatly improved. The reasons there are two, one is between chips from semiconductor package wiring distance on a board on the traditional methods of " cm " units are substantially reduced to dozens ofμ m~ 1mm; two is on a chip to form 1000 to tens of thousands of TSV, realize the multipoint connection chip.

  Microsoft 's accession to the HMCC, because we are considering how to corresponding is likely to become a personal computer and a computer to improving the performance of " memory bottleneck " problem. Memory bottleneck refers to as the microprocessor performance through multiple nucleation and constantly improve, the architecture of the DRAM performance will not be able to meet the need of processor. If do not solve this problem, can occur even if the computer new product, the actual performance is also not appropriate promotion situation. Compared with it, if the TSV based on the application of HMC in computer main memory, the data transmission speed can be increased to the current DRAM is about 15 times, therefore, is not just a giant Microsoft, American companies such as Intel are also active in research using HMC.

  In fact, plans to use TSV not only for HMC and other DRAM products. According to the semiconductor manufacturers plan, in the next few years, borne from electronic equipment input function of the CMOS sensor to the responsible for the operations of FPGA and multi core processor, and in charge of product storage of DRAM and NAND flash will have to import TSV. If the plan goes ahead, TSV will assume the input, operation, storage and other electronic equipment main function.

潞西市| 依兰县| 株洲市| 柳河县| 永顺县| 缙云县| 青河县| 黑水县| 灵丘县| 平邑县| 且末县| 乌海市| 石首市| 宜兰县| 阿拉善左旗| 孝义市| 清徐县| 仁怀市| 彭州市| 株洲市| 河间市| 稻城县| 如皋市| 玛曲县| 寿光市| 永昌县| 中西区| 龙陵县| 台湾省| 康平县| 涡阳县| 唐山市| 平山县| 搜索| 九江县| 建昌县| 三门县| 游戏| 怀安县| 平定县| 九龙坡区|